P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Mounting Type | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | FET Type | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Technology | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | Surface Mount | 12 V | -55 °C | 150 °C | 10 V | 2.5 V | SOT-23-6 Thin TSOT-23-6 | 19.8 nC | 1.5 V | P-Channel | 1.15 W | 839 pF | 30 V | MOSFET (Metal Oxide) | 75 mOhm |