STGWA75M65DF2 Series

Trench gate field-stop IGBT M series, 650 V 75 A low loss

Catalog

Trench gate field-stop IGBT M series, 650 V 75 A low loss

Part	Current - Collector Pulsed (Icm)	Package Name	Switching Energy (Off)	Switching Energy (On)	Test Condition Voltage	Test Condition Voltage (Secondary)	Test Condition Resistance	Test Condition Current	Input Type	Reverse Recovery Time (trr)	Package / Case	Vce(on) (Max)	Gate Charge	Operating Temperature (Min)	Operating Temperature (Max)	IGBT Type	Power - Max	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Td (off) @ 25°C	Td (on) @ 25°C
STMicroelectronics STGWA75M65DF2	225 A	TO-247 Long Leads	2.54 mJ	690 µJ	400 V	15 V	3.3 Ohm	75 A	Standard	165 ns	TO-247-3	2.1 V	225 nC	-55 °C	175 °C	Trench Field Stop	468 W	Through Hole	650 V	120 A	125 ns	47 ns

Catalog

Trench gate field-stop IGBT M series, 650 V 75 A low loss

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.