
MCP14A1201 Series
Manufacturer: Microchip Technology
12 A MOSFET GATE DRIVER WITH LOW INPUT THRESHOLD AND ENABLE
| Part | Gate Type | Input Type | Number of Drivers | Mounting Type | Logic Voltage - VIH | Logic Voltage - VIL | Qualification | Gate Channel | Driven Configuration | Operating Temperature (Max) | Operating Temperature (Min) | Channel Type | Package / Case | Fall Time (Typ) | Rise Time (Typ) | Package Width | Package Name | Package Length | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Current - Peak Output (Source) | Current - Peak Output (Sink) | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | Inverting | 1 | Surface Mount | 2 V | 0.8 V | AEC-Q100 | N-Channel P-Channel | Low-Side | 125 °C | -40 °C | Single | 8-WFDFN Exposed Pad | 25 ns | 25 ns | 3 mm | 8-TDFN | 2 mm | 18 V | 4.5 V | 12 A | 12 A | Automotive |
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | Inverting | 1 | Surface Mount | 2 V | 0.8 V | N-Channel P-Channel | Low-Side | 125 °C | -40 °C | Single | 25 ns | 25 ns | 3 mm | 8-MSOP 8-TSSOP 8-MSOP | 0.118 in | 18 V | 4.5 V | 12 A | 12 A | |||
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | Inverting | 1 | Surface Mount | 2 V | 0.8 V | N-Channel P-Channel | Low-Side | 125 °C | -40 °C | Single | 25 ns | 25 ns | 3 mm | 8-MSOP 8-TSSOP 8-MSOP | 0.118 in | 18 V | 4.5 V | 12 A | 12 A | |||
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | Inverting | 1 | Surface Mount | 2 V | 0.8 V | N-Channel P-Channel | Low-Side | 125 °C | -40 °C | Single | 25 ns | 25 ns | 3.9 mm | 8-SOIC | 0.154 in | 18 V | 4.5 V | 12 A | 12 A | |||
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | Inverting | 1 | Surface Mount | 2 V | 0.8 V | N-Channel P-Channel | Low-Side | 125 °C | -40 °C | Single | 8-WFDFN Exposed Pad | 25 ns | 25 ns | 3 mm | 8-TDFN | 2 mm | 18 V | 4.5 V | 12 A | 12 A | ||
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | Inverting | 1 | Surface Mount | 2 V | 0.8 V | AEC-Q100 | N-Channel P-Channel | Low-Side | 125 °C | -40 °C | Synchronous | 25 ns | 25 ns | 3.9 mm | 8-SOIC | 0.154 in | 18 V | 4.5 V | 12 A | 12 A | Automotive | |
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | Inverting | 1 | Surface Mount | 2 V | 0.8 V | AEC-Q100 | N-Channel P-Channel | Low-Side | 125 °C | -40 °C | Single | 25 ns | 25 ns | 3 mm | 8-MSOP 8-TSSOP 8-MSOP | 0.118 in | 18 V | 4.5 V | 12 A | 12 A | Automotive | |
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | Inverting | 1 | Surface Mount | 2 V | 0.8 V | N-Channel P-Channel | Low-Side | 125 °C | -40 °C | Single | 25 ns | 25 ns | 3.9 mm | 8-SOIC | 0.154 in | 18 V | 4.5 V | 12 A | 12 A |