DMN3026LVTQ Series

30V N-Channel Enhancement Mode MOSFET

Catalog

30V N-Channel Enhancement Mode MOSFET

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C
Diodes Inc DMN3026LVTQ-13	SOT-23-6 Thin TSOT-23-6	12.5 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	1.2 W	N-Channel	30 V	2 V	20 V	643 pF	Surface Mount	23 mOhm	4.5 V 10 V	6.6 A

Catalog

30V N-Channel Enhancement Mode MOSFET

Key Features

• Low Input Capacitance

• Low On-Resistance

• Fast Switching Speed

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.