Complementary Pair Enhancement Mode MOSFET
Complementary Pair Enhancement Mode MOSFET
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Technology | Configuration | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Supplier Device Package | FET Feature | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 150 °C | Surface Mount | MOSFET (Metal Oxide) | N and P-Channel | 604 pF | 40 V | 28 mOhm | 8-SO | Logic Level Gate | 3 V | 4.8 A 6.5 A | 1.8 W | 12.9 nC |