MOSFET N-CHANNEL_55/60V
| Part | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Grade | Mounting Type | Technology | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Qualification | FET Type | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Package / Case | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | 10 V | -55 °C | 175 ░C | 60 V | Automotive | Through Hole | MOSFET (Metal Oxide) | 10400 pF | 150 W | 4 V | AEC-Q101 | N-Channel | 128 nC | 90 A | I2PAK TO-262-3 Long Leads TO-262AA | 4 mOhm |