STW69 Series

N-channel 650 V, 0.037 Ohm typ., 58 A MDmesh M5 Power MOSFET in a TO247-4 package

Catalog

N-channel 650 V, 0.037 Ohm typ., 58 A MDmesh M5 Power MOSFET in a TO247-4 package

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology	Mounting Type	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STW69N65M5-4	143 nC	TO-247-4	650 V	TO-247-4L	10 V	25 V	MOSFET (Metal Oxide)	Through Hole	330 W	N-Channel	45 mOhm	5 V	150 °C	6420 pF	58 A

Catalog

N-channel 650 V, 0.037 Ohm typ., 58 A MDmesh M5 Power MOSFET in a TO247-4 package

Description

This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.