IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 15 MOHM;
| Part | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Package / Case | Mounting Type | Supplier Device Package | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 15 mOhm | 85 A | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | D2PAK | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 4460 pF | N-Channel | 110 nC | 20 V | 5 V | 350 W | 150 V | 10 V |
Infineon Technologies | 15 mOhm | 85 A | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | D2PAK | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 4460 pF | N-Channel | 110 nC | 30 V | 5 V | 350 W | 150 V | 10 V |
Infineon Technologies | 14.7 mOhm | 86 A | D2PAK TO-263-7 | Surface Mount | D2PAK-7 | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 4460 pF | N-Channel | 110 nC | 30 V | 5 V | 350 W | 150 V | 10 V |