DMG1023UVQ Series

Dual P-Channel Enhancement Mode MOSFET

Catalog

Dual P-Channel Enhancement Mode MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Configuration	Mounting Type	Rds On (Max) @ Id, Vgs	Grade	Qualification
Diodes Inc DMG1023UV-7	1.03 A	0.62 nC	1 V	-55 °C	150 °C	MOSFET (Metal Oxide)	SOT-563 SOT-666	SOT-563	20 V	530 mW	59.76 pF	Logic Level Gate	2 P-Channel	Surface Mount	750 mOhm
Diodes Inc DMG1023UVQ-13	1.03 A	0.622 nC	1 V	-55 °C	150 °C	MOSFET (Metal Oxide)	SOT-563 SOT-666	SOT-563	20 V	530 mW	59 pF		2 P-Channel	Surface Mount	750 mOhm	Automotive	AEC-Q101

Catalog

Dual P-Channel Enhancement Mode MOSFET

Key Features

• Dual P-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.