IPI47N10 Series

Catalog

MOSFET N-CH 100V 47A TO262-3

Part	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPI47N10SL26AKSA1	26 mOhm	N-Channel	4.5 V 10 V	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	47 A	20 V	100 V	MOSFET (Metal Oxide)	2500 pF	PG-TO262-3	-55 °C	175 ░C	135 nC	2 V	175 W
Infineon Technologies IPI47N10S33AKSA1	33 mOhm	N-Channel	10 V	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	47 A	20 V	100 V	MOSFET (Metal Oxide)	2500 pF	PG-TO262-3	-55 °C	175 ░C		4 V	175 W	105 nC