Catalog
100 V, 10 A PNP high power bipolar transistor
Description
AI
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
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100 V, 10 A PNP high power bipolar transistor
100 V, 10 A PNP high power bipolar transistor
| Part | Transistor Type | Current - Collector Cutoff (Max) | Voltage - Collector Emitter Breakdown (Max) | Frequency - Transition | DC Current Gain (hFE) (Min) | Power - Max | Package / Case | Mounting Type | Qualification | Package Name | Current - Collector (Ic) (Max) | Operating Temperature | Vce Saturation (Max) | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | PNP | 100 nA | 100 V | 90 MHz | 180 | 1.5 W | SC-100 SOT-669 | Surface Mount | AEC-Q100 | LFPAK56 Power-SO8 | 10 A | 175 °C | 800 mV | Automotive |
 Nexperia USA Inc. | NPN | 100 nA | 100 V | 145 MHz | 150 | 1.5 W | SC-100 SOT-669 | Surface Mount | AEC-Q100 | LFPAK56 Power-SO8 | 10 A | 175 °C | 370 mV | Automotive |