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IR MOSFET™ P+P DUAL POWER MOSFET ; SO-8 PACKAGE; 21 MOHM;
| Part | Configuration | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Drain to Source Voltage (Vdss) | FET Feature | Rds On (Max) @ Id, Vgs | Technology | Package / Case | Package / Case [y] | Package / Case [x] | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2 P-Channel | 39 nC | 2.4 V | 1300 pF | 8 A | 8-SO | -55 °C | 150 °C | Surface Mount | 30 V | Logic Level Gate | 21 mOhm | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 2 W |