MOSFET N-CH 500V 32A TO268
| Part | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Mounting Type | Package / Case | Power Dissipation (Max) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 5700 pF | N-Channel | Surface Mount | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 360 W | MOSFET (Metal Oxide) | -55 °C | 150 °C | 150 mOhm | 4 V | 32 A | 500 V | TO-268AA | 10 V | 20 V | 300 nC | |
IXYS | 4925 pF | N-Channel | Surface Mount | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 360 W | MOSFET (Metal Oxide) | -55 °C | 150 °C | 32 A | 500 V | TO-268AA | 10 V | 20 V | 190 nC | 4.5 V |