31DQ09 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 90V 3.3A C-16
| Part | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Operating Temperature - Junction (Min) | Operating Temperature - Junction (Max) | Package / Case | Current - Reverse Leakage | Mounting Type | Package Name | Voltage - Forward (Vf) (Max) | Technology | Capacitance |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 3.3 A | 90 V | 500 ns | 200 mA | -40 °C | 150 °C | Axial DO-201AD | 1 mA | Through Hole | C-16 | 850 mV | Schottky | |
Vishay General Semiconductor - Diodes Division | 3.3 A | 90 V | 500 ns | 200 mA | -40 °C | 150 °C | Axial DO-201AD | 100 µA | Through Hole | C-16 | 850 mV | Schottky | 110 pF |
Vishay General Semiconductor - Diodes Division | 3.3 A | 90 V | 500 ns | 200 mA | -40 °C | 150 °C | Axial DO-201AD | 1 mA | Through Hole | C-16 | 850 mV | Schottky | |
Vishay General Semiconductor - Diodes Division | 3.3 A | 90 V | 500 ns | 200 mA | -40 °C | 150 °C | Axial DO-201AD | 100 µA | Through Hole | C-16 | 850 mV | Schottky | 110 pF |