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MOSFET N-CH 30V 3.2A TSM
| Part | Supplier Device Package | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Technology | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Package / Case | FET Type | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drain to Source Voltage (Vdss) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | TSM | 120 mOhm | 152 pF | Surface Mount | MOSFET (Metal Oxide) | 150 °C | 3.2 A | 1.25 W | SC-59 SOT-23-3 TO-236-3 | N-Channel | 4 V | 2.5 V | 30 V | 10 V |