MT53E2G32 Series
Manufacturer: Micron Technology Inc.
IC DRAM 64GBIT 2.133GHZ FBGA
| Part | Grade | Memory Type | Operating Temperature (Min) | Operating Temperature (Max) | Technology | Voltage - Supply | Memory Size | Memory Format | Clock Frequency | Qualification | Memory Depth | Memory Width | Package / Case | Mounting Type | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Access Time | Package Width | Package Name | Package Length | Memory Interface (Type) | Write Cycle Time - Word | Write Cycle Time - Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. | Automotive | Volatile | -40 °C | 105 °C | SDRAM - Mobile LPDDR4 | 1.1 V | 64 GBIT | DRAM | 2.133 GHz | AEC-Q100 | 2 G | 32 bit | |||||||||||
Micron Technology Inc. | Automotive | Volatile | -40 °C | 95 °C | SDRAM - Mobile LPDDR4X | 64 GBIT | DRAM | 2.133 GHz | AEC-Q100 | 2 G | 32 bit | 200-TFBGA | Surface Mount | 1.06 V | 1.17 V | 3.5 ns | 14.5 mm | 200-TFBGA | 10 mm | Parallel | 18 ns | 18 ns | |
Micron Technology Inc. | Automotive | Volatile | -40 °C | 95 °C | SDRAM - Mobile LPDDR4 | 1.1 V | 64 GBIT | DRAM | 2.133 GHz | AEC-Q100 | 2 G | 32 bit | |||||||||||
Micron Technology Inc. | Volatile | -25 °C | 85 °C | SDRAM - Mobile LPDDR4X | 64 GBIT | DRAM | 2.133 GHz | 2 G | 32 bit | 200-TFBGA | Surface Mount | 1.06 V | 1.17 V | 3.5 ns | 14.5 mm | 200-TFBGA | 10 mm | Parallel | 18 ns | 18 ns | |||
Micron Technology Inc. | Automotive | Volatile | -40 °C | 105 °C | SDRAM - Mobile LPDDR4X | 64 GBIT | DRAM | 2.133 GHz | AEC-Q100 | 2 G | 32 bit | 200-TFBGA | Surface Mount | 1.06 V | 1.17 V | 3.5 ns | 14.5 mm | 200-TFBGA | 10 mm | Parallel | 18 ns | 18 ns | |
Micron Technology Inc. | Volatile | -30 °C | 85 °C | SDRAM - Mobile LPDDR4 | 1.1 V | 64 GBIT | DRAM | 2.133 GHz | 2 G | 32 bit | |||||||||||||
Micron Technology Inc. | Volatile | -25 °C | 85 °C | SDRAM - Mobile LPDDR4X | 64 GBIT | DRAM | 2.133 GHz | 2 G | 32 bit | 200-TFBGA | Surface Mount | 1.06 V | 1.17 V | 3.5 ns | 14.5 mm | 200-TFBGA | 10 mm | Parallel | 18 ns | 18 ns | |||
Micron Technology Inc. | Automotive | Volatile | -40 °C | 105 °C | SDRAM - Mobile LPDDR4 | 1.1 V | 64 GBIT | DRAM | 2.133 GHz | AEC-Q100 | 2 G | 32 bit | |||||||||||
Micron Technology Inc. | Automotive | Volatile | -40 °C | 95 °C | SDRAM - Mobile LPDDR4X | 64 GBIT | DRAM | 2.133 GHz | AEC-Q100 | 2 G | 32 bit | 200-TFBGA | Surface Mount | 1.06 V | 1.17 V | 3.5 ns | 14.5 mm | 200-TFBGA | 10 mm | Parallel | 18 ns | 18 ns | |
Micron Technology Inc. | Automotive | Volatile | -40 °C | 105 °C | SDRAM - Mobile LPDDR4X | 64 GBIT | DRAM | 2.133 GHz | AEC-Q100 | 2 G | 32 bit | 200-TFBGA | Surface Mount | 1.06 V | 1.17 V | 3.5 ns | 14.5 mm | 200-TFBGA | 10 mm | Parallel | 18 ns | 18 ns |