IC GATE DRVR HALF-BRIDGE 8DIP
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Current - Peak Output (Source, Sink) | Supplier Device Package | Driven Configuration | Input Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | High Side Voltage - Max (Bootstrap) [Max] | Mounting Type | Channel Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Package / Case | Package / Case | Package / Case | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 150 °C | -40 °C | 125 mA 250 mA | 8-PDIP | Half-Bridge | RC Input Circuit | 2 | IGBT N-Channel MOSFET | 80 ns | 40 ns | 600 V | Through Hole | Synchronous | 20 V | 10 VDC | 0.3 in | 8-DIP | 7.62 mm | ||
Infineon Technologies | 150 °C | -40 °C | 125 mA 250 mA | 8-SOIC | Half-Bridge | RC Input Circuit | 2 | IGBT N-Channel MOSFET | 80 ns | 40 ns | 600 V | Surface Mount | Synchronous | 20 V | 10 VDC | 8-SOIC | 3.9 mm | 0.154 in | ||
Infineon Technologies | 150 °C | -40 °C | 125 mA 250 mA | 8-SOIC | Half-Bridge | RC Input Circuit | 2 | IGBT N-Channel MOSFET | 80 ns | 40 ns | 600 V | Surface Mount | Synchronous | 20 V | 10 VDC | 8-SOIC | 3.9 mm | 0.154 in |