Beta
⌘K
SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN III SERIES, SINGLE, 600 V, 4 A, 4.5 NC, TO-252 (DPAK)
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Technology | Current - Average Rectified (Io) | Mounting Type | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Speed | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 175 ░C | -55 C | SiC (Silicon Carbide) Schottky | 4 A | Surface Mount | 25 µA | 600 V | PG-TO252-3 | No Recovery Time | 0 ns | 2.3 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 |