MBR40045 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOTT 45V 200A 2TOWER
| Part | Technology | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) | Mounting Type | Package / Case | Voltage - DC Reverse (Vr) (Max) | Diode Pair Count | Diode Configuration | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Current - Reverse Leakage | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Schottky | 200 A | 650 mV | Chassis Mount | Twin Tower | 45 V | 1 pair | Common Anode | 500 ns | 200 mA | 5 mA | 150 °C | -55 °C | Twin Tower |
GeneSiC Semiconductor | Schottky | 200 A | 600 mV | Chassis Mount | Twin Tower | 45 V | 1 pair | Common Cathode | 500 ns | 200 mA | 5 mA | 150 °C | -55 °C | Twin Tower |
GeneSiC Semiconductor | Schottky | 200 A | 600 mV | Chassis Mount | Twin Tower | 45 V | 1 pair | Common Cathode | 500 ns | 200 mA | 5 mA | 150 °C | -55 °C | Twin Tower |
GeneSiC Semiconductor | Schottky | 200 A | 650 mV | Chassis Mount | Twin Tower | 45 V | 1 pair | Common Anode | 500 ns | 200 mA | 5 mA | 150 °C | -55 °C | Twin Tower |
GeneSiC Semiconductor | Schottky | 200 A | 600 mV | Chassis Mount | Twin Tower | 45 V | 1 pair | Common Anode | 500 ns | 200 mA | 5 mA | 150 °C | -55 °C | Twin Tower |
GeneSiC Semiconductor | Schottky | 200 A | 600 mV | Chassis Mount | Twin Tower | 45 V | 1 pair | Common Anode | 500 ns | 200 mA | 5 mA | 150 °C | -55 °C | Twin Tower |
GeneSiC Semiconductor | Schottky | 200 A | 650 mV | Chassis Mount | Twin Tower | 45 V | 1 pair | Common Cathode | 500 ns | 200 mA | 5 mA | 150 °C | -55 °C | Twin Tower |
GeneSiC Semiconductor | Schottky | 200 A | 650 mV | Chassis Mount | Twin Tower | 45 V | 1 pair | Common Cathode | 500 ns | 200 mA | 5 mA | 150 °C | -55 °C | Twin Tower |