BUK9E1R8 Series
Manufacturer: NXP USA Inc.
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⌘K
MOSFET N-CH 40V 120A I2PAK
| Part | Current - Continuous Drain (Id) (Tc) | Qualification | Input Capacitance (Ciss) (Max) | Technology | Drain to Source Voltage (Vdss) | Package / Case | Mounting Type | Vgs(th) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Power Dissipation (Max) | Vgs (Max) | Package Name | Rds On (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | FET Type | Gate Charge (Max) | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 NXP USA Inc. | 120 A | AEC-Q101 | 16400 pF | MOSFET (Metal Oxide) | 40 V | I2PAK TO-262-3 Long Leads TO-262AA | Through Hole | 2.1 V | -55 °C | 175 °C | 349 W | 10 V | I2PAK | 1.7 mOhm | 10 V | 5 V | N-Channel | 120 nC | Automotive |