DMP4047LFDEQ Series

40V P-Channel Enhancement Mode MOSFET

Catalog

40V P-Channel Enhancement Mode MOSFET

Part	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	FET Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Grade	Qualification
Diodes Inc DMP4047LFDE-7	700 mW	MOSFET (Metal Oxide)	40 V	20 V	3.3 A	U-DFN2020-6 (Type E)	6-PowerUDFN	P-Channel	Surface Mount	-55 °C	150 °C	2.2 V	4.5 V 10 V	23.2 nC	33 mOhm
Diodes Inc DMP4047LFDEQ-7		MOSFET (Metal Oxide)	40 V	20 V	6.5 A	U-DFN2020-6 (Type E)	6-PowerUDFN	P-Channel	Surface Mount	-55 °C	150 °C	2.2 V	4.5 V 10 V			1265 pF	34 mOhm	24.9 nC	Automotive	AEC-Q101

Catalog

40V P-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switch (UIS) Test in Production

• 0.6mm Profile – Ideal for Low Profile Applications

• PCB Footprint of 4mm2

• Low Gate Threshold Voltage

• Low On-Resistance

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• The DMP4047LFDEQ is suitable for automotive applicationsrequiring specific change control; this part is AEC-Q101qualified, PPAP capable, and manufactured in IATF 16949certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This new generation 40V P channel enhancement mode MOSFET has been designed to minimise RDS(on)and yet maintain superior switching performance and 0.6mm profile – ideal for low profile applications . This device is ideally suited to Handheld and lighten application