SiC MOSFET in TO247-4L HV
SiC MOSFET in TO247-4L HV
| Part | Power Dissipation (Max) | Package / Case | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Technology | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) (Tc) | Vgs (Max) | Gate Charge (Max) | FET Type | Input Capacitance (Ciss) (Max) | Vgs(th) (Max) | Rds On (Max) | Mounting Type | Package Name | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
LITTELFUSE | 395 W | TO-247-4 | 18 V | 15 V | SiCFET (Silicon Carbide) | -55 °C | 150 °C | 79 A | 30 V | 135 nC | N-Channel | 1.5 pF | 4.5 V | 39 mOhm | Through Hole | TO-247-4L | 1200 V |