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IR MOSFET™ N-CHANNEL POWER MOSFET ; SUPERSO8 5X6 PACKAGE; 58 MOHM;
| Part | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | FET Type | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Technology | Vgs (Max) | Mounting Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 3.6 W 104 W | 32 nC | 150 V | 5 A 27 A | N-Channel | 8-VQFN Exposed Pad | 10 V | -55 °C | 150 °C | 5 V | 58 mOhm | MOSFET (Metal Oxide) | 20 V | Surface Mount | PQFN (5x6) | 1350 pF |