Beta
⌘K
MOSFET N-CH 600V 13A TO220SIS
| Part | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature | Mounting Type | Technology | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | Package / Case | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 2300 pF | 30 V | 430 mOhm | 10 V | TO-220SIS | N-Channel | 40 nC | 150 °C | Through Hole | MOSFET (Metal Oxide) | 13 A | 50 W | TO-220-3 Full Pack | 600 V |