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MOSFET N-CH 560V 7.6A TO252-3
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | FET Type | Vgs (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Package / Case | Rds On (Max) @ Id, Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Technology | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | -55 °C | 150 °C | 750 pF | PG-TO252-3-11 | N-Channel | 20 V | 560 V | 32 nC | 83 W | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 600 mOhm | 7.6 A | 3.9 V | MOSFET (Metal Oxide) | Surface Mount | 10 V |