GAN063 Series
Manufacturer: Nexperia USA Inc.
Beta
⌘K
GALLIUM NITRIDE (GAN) TRANSISTOR, 650 V, 34.5 A, 60 MILLIOHMS, 15 NC, TO-247, 3 PINS, SURFACE MOUNT
| Part | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) | FET Type | Power Dissipation (Max) | Technology | Operating Temperature (Min) | Operating Temperature (Max) | Gate Charge (Max) | Rds On (Max) | Input Capacitance (Ciss) (Max) | Package Name | Current - Continuous Drain (Id) (Tc) | Mounting Type | Vgs (Max) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 10 V | 650 V | 4.5 V | N-Channel | 143 W | GaNFET (Cascode Gallium Nitride FET) | -55 °C | 175 °C | 15 nC | 60 mOhm | 1000 pF 1000 pF | TO-247-3 | 34.5 A | Through Hole | 20 V | TO-247-3 |