G3R20 Series

Catalog

SIC MOSFET N-CH 128A TO247-4

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Package Name	Gate Charge (Max)	Technology	Input Capacitance (Ciss) (Max)	Rds On (Max)	Power Dissipation (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Vgs (Max) Negative	Vgs (Max) Positive
GeneSiC Semiconductor G3R20MT12K	15 V	1200 V	TO-247-4	219 nC	SiCFET (Silicon Carbide)	5873 pF	24 mOhm	542 W	Through Hole	15 V	TO-247-4	N-Channel	2.69 V	-55 °C	175 °C	128 A
GeneSiC Semiconductor G3R20MT12N		1200 V	SOT-227	219 nC	SiCFET (Silicon Carbide)	5873 pF	24 mOhm	365 W	Chassis Mount	15 V	miniBLOC SOT-227-4	N-Channel	2.69 V	-55 °C	175 °C	105 A 105 A	-10 V	20 V
GeneSiC Semiconductor G3R20MT17K	15 V	1700 V	TO-247-4	400 nC	SiCFET (Silicon Carbide)	10187 pF 10187 pF	26 mOhm	809 W	Through Hole	15 V	TO-247-4	N-Channel	2.7 V	-55 °C	175 °C	124 A
GeneSiC Semiconductor G3R20MT12K	15 V	1200 V	TO-247-4	219 nC	SiCFET (Silicon Carbide)	5873 pF	24 mOhm	542 W	Through Hole	15 V	TO-247-4	N-Channel	2.69 V	-55 °C	175 °C	128 A
GeneSiC Semiconductor G3R20MT17K	15 V	1700 V	TO-247-4	400 nC	SiCFET (Silicon Carbide)	10187 pF 10187 pF	26 mOhm	809 W	Through Hole	15 V	TO-247-4	N-Channel	2.7 V	-55 °C	175 °C	124 A
GeneSiC Semiconductor G3R20MT17N	15 V	1700 V	SOT-227	400 nC	SiCFET (Silicon Carbide)	10187 pF 10187 pF	26 mOhm	523 W	Chassis Mount	15 V	miniBLOC SOT-227-4	N-Channel	2.7 V	-55 °C	175 °C	100 A
GeneSiC Semiconductor G3R20MT17N	15 V	1700 V	SOT-227	400 nC	SiCFET (Silicon Carbide)	10187 pF 10187 pF	26 mOhm	523 W	Chassis Mount	15 V	miniBLOC SOT-227-4	N-Channel	2.7 V	-55 °C	175 °C	100 A
GeneSiC Semiconductor G3R20MT12N		1200 V	SOT-227	219 nC	SiCFET (Silicon Carbide)	5873 pF	24 mOhm	365 W	Chassis Mount	15 V	miniBLOC SOT-227-4	N-Channel	2.69 V	-55 °C	175 °C	105 A 105 A	-10 V	20 V