Dual P-Channel Enhancement Mode MOSFET
Dual P-Channel Enhancement Mode MOSFET
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Power - Max [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Configuration | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | -55 °C | 150 °C | MOSFET (Metal Oxide) | 1293 pF | Surface Mount | 1.2 W | 8-SOIC | 3.9 mm | 0.154 in | 55 mOhm | 8-SO | 24 nC | 4.8 A | 60 V | 3 V | 2 P-Channel | ||||||
Diodes Inc | -55 °C | 150 °C | MOSFET (Metal Oxide) | Surface Mount | 8-PowerVDFN | 50 mOhm | POWERDI3333-8 | 4.8 A | 60 V | 3 V | 24 nC | 4.5 V 10 V | 1.1 W | 20 V | 1293 pF | P-Channel |