STB57N65M5 Series

N-channel 650 V, 56 mOhm typ., 42 A MDmesh M5 Power MOSFET in a D2PAK package

Catalog

N-channel 650 V, 56 mOhm typ., 42 A MDmesh M5 Power MOSFET in a D2PAK package

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Mounting Type	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
STMicroelectronics STB57N65M5	98 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	42 A	650 V	250 W	Surface Mount	25 V	MOSFET (Metal Oxide)	4200 pF	10 V	N-Channel	150 °C	TO-263 (D2PAK)	5 V	63 mOhm

Catalog

N-channel 650 V, 56 mOhm typ., 42 A MDmesh M5 Power MOSFET in a D2PAK package

Description

These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.