
93C66C Series
Manufacturer: Microchip Technology
4KB 5V MICROWIRE (3-WIRE) SERIAL EEPROM WITH HARDWARE SELECTABLE WORD SIZE
| Part | Package Length | Package Name | Package Width | Write Cycle Time - Word | Write Cycle Time - Page | Operating Temperature (Max) | Operating Temperature (Min) | Memory Type | Clock Frequency | Memory Interface (Type) | Memory Format | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Memory Depth (Option 2) | Memory Organization | Memory Width (Option 2) | Memory Depth (Option 1) | Memory Width (Option 1) | Mounting Type | Memory Size | Technology | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | 0.154 in | 8-SOIC | 3.9 mm | 2 ms | 2 ms | 85 °C | -40 °C | Non-Volatile | 3 MHz | Microwire | EEPROM | 5.5 V | 4.5 V | 256 | 256 x 16 512 x 8 | 16 bit | 512 | 8 bit | Surface Mount | 4 Kbit | EEPROM | |
Microchip Technology | 0.154 in | 8-SOIC | 3.9 mm | 2 ms | 2 ms | 125 °C | -40 °C | Non-Volatile | 3 MHz | Microwire | EEPROM | 5.5 V | 4.5 V | 256 | 256 x 16 512 x 8 | 16 bit | 512 | 8 bit | Surface Mount | 4 Kbit | EEPROM | |
Microchip Technology | 0.154 in | 8-SOIC | 3.9 mm | 2 ms | 2 ms | 85 °C | -40 °C | Non-Volatile | 3 MHz | Microwire | EEPROM | 5.5 V | 4.5 V | 256 | 256 x 16 512 x 8 | 16 bit | 512 | 8 bit | Surface Mount | 4 Kbit | EEPROM | |
Microchip Technology | 0.173 in | 8-TSSOP | 4.4 mm | 2 ms | 2 ms | 125 °C | -40 °C | Non-Volatile | 3 MHz | Microwire | EEPROM | 5.5 V | 4.5 V | 256 | 256 x 16 512 x 8 | 16 bit | 512 | 8 bit | Surface Mount | 4 Kbit | EEPROM | |
Microchip Technology | 0.118 in | 8-MSOP 8-TSSOP 8-MSOP | 3 mm | 2 ms | 2 ms | 85 °C | -40 °C | Non-Volatile | 3 MHz | Microwire | EEPROM | 5.5 V | 4.5 V | 256 | 256 x 16 512 x 8 | 16 bit | 512 | 8 bit | Surface Mount | 4 Kbit | EEPROM | |
Microchip Technology | 0.3 in | 8-DIP 8-PDIP | 7.62 mm | 2 ms | 2 ms | 125 °C | -40 °C | Non-Volatile | 3 MHz | Microwire | EEPROM | 5.5 V | 4.5 V | 256 | 256 x 16 512 x 8 | 16 bit | 512 | 8 bit | Through Hole | 4 Kbit | EEPROM | |
Microchip Technology | Die | 2 ms | 2 ms | 85 °C | -40 °C | Non-Volatile | 3 MHz | Microwire | EEPROM | 5.5 V | 4.5 V | 256 | 256 x 16 512 x 8 | 16 bit | 512 | 8 bit | Surface Mount | 4 Kbit | EEPROM | Die | ||
Microchip Technology | 2 mm | 8-TDFN | 3 mm | 2 ms | 2 ms | 125 °C | -40 °C | Non-Volatile | 3 MHz | Microwire | EEPROM | 5.5 V | 4.5 V | 256 | 256 x 16 512 x 8 | 16 bit | 512 | 8 bit | Surface Mount | 4 Kbit | EEPROM | 8-WFDFN Exposed Pad |
Microchip Technology | 2 mm | 8-TDFN | 3 mm | 2 ms | 2 ms | 85 °C | -40 °C | Non-Volatile | 3 MHz | Microwire | EEPROM | 5.5 V | 4.5 V | 256 | 256 x 16 512 x 8 | 16 bit | 512 | 8 bit | Surface Mount | 4 Kbit | EEPROM | 8-WFDFN Exposed Pad |
Microchip Technology | Die | 2 ms | 2 ms | 70 °C | 0 °C | Non-Volatile | 3 MHz | Microwire | EEPROM | 5.5 V | 4.5 V | 256 | 256 x 16 512 x 8 | 16 bit | 512 | 8 bit | Surface Mount | 4 Kbit | EEPROM | Die |