MOSFET N-CH 30V 48A 8SOP
| Part | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id [Max] | FET Type | Operating Temperature | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Technology | Rds On (Max) @ Id, Vgs | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage  | 20 V  | 48 A  | 2.1 V  | N-Channel  | 175 °C  | 8-SOP Advance (5x5)  | 1975 pF  | 8-PowerVDFN  | 22 nC  | 69 W  830 mW  | 30 V  | Surface Mount  | 4.5 V  10 V  | MOSFET (Metal Oxide)  | 4.8 mOhm  |