STD8N60DM2 Series

N-channel 600 V, 550 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package

Catalog

N-channel 600 V, 550 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package

Part	Vgs (Max)	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Supplier Device Package	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)
STMicroelectronics STD8N60DM2	30 V	150 °C	8 A	13.5 nC	375 pF	85 W	DPAK	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	5 V	N-Channel	10 V	600 mOhm	MOSFET (Metal Oxide)	600 V

Catalog

N-channel 600 V, 550 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.