GC05MPS12 Series
Manufacturer: GeneSiC Semiconductor
DIODE SIL CARB 1.2KV 27A TO252-2
| Part | Voltage - DC Reverse (Vr) (Max) | Package Name | Current - Reverse Leakage | Capacitance | Package / Case | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) | Technology | Reverse Recovery Time (trr) | Mounting Type | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 1200 V | TO-252-2 | 4 µA | 359 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 175 °C | -55 °C | 27 A | 1.8 V | SiC (Silicon Carbide) Schottky | 0 ns | Surface Mount | |||
GeneSiC Semiconductor | 1200 V | TO-252-2 | 4 µA | 359 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 175 °C | -55 °C | 27 A | 1.8 V | SiC (Silicon Carbide) Schottky | 0 ns | Surface Mount | 500 mA | No Recovery Time | 500 mA 500 mA |