Catalog
NPN power Darlington transistor
Description
AI
The devices are manufactured in planar base island technology with monolithic Darlington configuration.
NPN power Darlington transistor
| Part | Mounting Type | Operating Temperature | Power - Max | Package / Case | Transistor Type | DC Current Gain (hFE) (Min) | Vce Saturation (Max) | Package Name | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Voltage - Collector Emitter Breakdown (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | Through Hole | 150 °C | 40 W | TO-126-3 TO-225AA | Darlington NPN | 750 | 2.8 V | SOT-32-3 | 4 A | 500 µA | 80 V |