DMT68M8LFV Series

60V N-Channel Enhancement Mode MOSFET

Catalog

60V N-Channel Enhancement Mode MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
Diodes Inc DMT68M8LFV-7	54.1 A	8-PowerVDFN	2.7 W 41.7 W	N-Channel	9.5 mOhm	4.5 V 10 V	30 nC	3 V	20 V	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	60 V	PowerDI3333-8 (Type UX)	2078 pF
Diodes Inc DMT68M8LFV-13	54.1 A	8-PowerVDFN	2.7 W 41.7 W	N-Channel	9.5 mOhm	4.5 V 10 V	30 nC	3 V	20 V	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	60 V	PowerDI3333-8 (Type UX)	2078 pF

Catalog

60V N-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable And Robust End Application

• Low RDS(ON) – Ensures On-State Losses are Minimized

• Small Form Factor Thermally Efficient Package Enables Higher Density End Products

• Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product

• ESD Protected Gate

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.