VNB35NV04-E Series

OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET

Catalog

OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET

Part	Switch Type	Number of Outputs	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Ratio - Input:Output [custom]	Output Type	Input Type	Current - Output (Max) [Max]	Mounting Type	Rds On (Typ)	Supplier Device Package	Fault Protection	Interface	Output Configuration	Voltage - Load
STMicroelectronics VNB35NV04TR-E
STMicroelectronics VNB35NV04TR-E	General Purpose	1	150 °C	-40 °C	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	1:1	N-Channel	Non-Inverting	30 A	Surface Mount	13 mOhm	D2PAK	Current Limiting (Fixed), Over Temperature, Over Voltage	On/Off	Low Side	36 V
STMicroelectronics VNB35NV04TR-E
STMicroelectronics VNB35NV04TR-E

Catalog

OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET

Description

The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics®VIPower®M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.