Catalog
650V, 8A, THD, Silicon-carbide (SiC) SBD
Description
AI
Shorter recovery time, enabling high-speed switching.
Beta
⌘K
650V, 8A, THD, Silicon-carbide (SiC) SBD
650V, 8A, THD, Silicon-carbide (SiC) SBD
| Part | Voltage - DC Reverse (Vr) (Max) | Package Name | Package / Case | Voltage - Forward (Vf) (Max) | Reverse Recovery Time (trr) | Capacitance | Current - Average Rectified (Io) | Current - Reverse Leakage | Technology | Operating Temperature - Junction | Mounting Type | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 650 V | TO-220FM | TO-220-2 Full Pack | 1.5 V | 0 ns | 400 pF | 8 A | 40 µA | SiC (Silicon Carbide) Schottky | 175 °C | Through Hole | 500 mA | No Recovery Time | 500 mA 500 mA |