TSM70 Series

Manufacturer: Taiwan Semiconductor Corporation

Catalog

MOSFET N-CH 700V 8A TO262S

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Supplier Device Package	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Taiwan Semiconductor Corporation TSM70N600ACL X0G	12.6 nC	MOSFET (Metal Oxide)	TO-262S (I2PAK)	83 W	700 V	-55 °C	150 °C	10 V	N-Channel	8 A	600 mOhm	30 V	743 pF	Through Hole	4 V
Taiwan Semiconductor Corporation TSM70NB1R4CP		MOSFET (Metal Oxide)	TO-252 (DPAK)		700 V	-55 °C	150 °C	10 V	N-Channel	3 A	1.4 Ohm	30 V	317 pF	Surface Mount	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	7.4 nC	28 W
Taiwan Semiconductor Corporation TSM70N750CP ROG		MOSFET (Metal Oxide)	TO-252 (DPAK)		700 V	-55 °C	150 °C	10 V	N-Channel	6 A	750 mOhm	30 V		Surface Mount	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	10.7 nC	62.5 W	555 pF
Taiwan Semiconductor Corporation TSM70N900CP ROG		MOSFET (Metal Oxide)	TO-252 (DPAK)		700 V	-55 °C	150 °C	10 V	N-Channel	4.5 A	900 mOhm	30 V	482 pF	Surface Mount	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	9.7 nC	50 W
Taiwan Semiconductor Corporation TSM70N600CI	12.6 nC	MOSFET (Metal Oxide)	ITO-220	32 W	700 V	-55 °C	150 °C	10 V	N-Channel	8 A	600 mOhm	30 V	743 pF	Through Hole	4 V	TO-220-3 Full Pack Isolated Tab
Taiwan Semiconductor Corporation TSM70N1R4CP ROG		MOSFET (Metal Oxide)	TO-252 (DPAK)	38 W	700 V	-55 °C	150 °C	10 V	N-Channel	3.3 A	1.4 Ohm	30 V		Surface Mount	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	7.7 nC		370 pF
Taiwan Semiconductor Corporation TSM70N600ACL	12.6 nC	MOSFET (Metal Oxide)	TO-262S (I2PAK SL)	83 W	700 V	-55 °C	150 °C	10 V	N-Channel	8 A	600 mOhm	30 V	743 pF	Through Hole	4 V
Taiwan Semiconductor Corporation TSM70N600CP ROG	12.6 nC	MOSFET (Metal Oxide)	TO-252 (DPAK)	83 W	700 V	-55 °C	150 °C	10 V	N-Channel	8 A	600 mOhm	30 V	743 pF	Surface Mount	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
Taiwan Semiconductor Corporation TSM70N380CP ROG		MOSFET (Metal Oxide)	TO-252 (DPAK)	125 W	700 V	-55 °C	150 °C	10 V	N-Channel	11 A	380 mOhm	30 V	981 pF	Surface Mount	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	18.8 nC
Taiwan Semiconductor Corporation TSM70N380CP		MOSFET (Metal Oxide)	TO-252 (DPAK)	125 W	700 V	-55 °C	150 °C	10 V	N-Channel	11 A	380 mOhm	30 V	981 pF	Surface Mount	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	18.8 nC