BSM600 Series

Catalog

SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 600 A, 1.2 KV, MODULE

Part	Channel Count	Configuration - Features	Configuration	Vgs(th) (Max)	Mounting Type	Technology	Current - Continuous Drain (Id) (Tc)	Package Name	Drain to Source Voltage (Vdss)	Package / Case	Power - Max (Tc)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Vgs (Max) Positive	Vgs (Max) Negative	FET Type	Operating Temperature
Rohm Semiconductor BSM600D12P3G001	2	Half Bridge	N-Channel	5.6 V	Chassis Mount	Silicon Carbide (SiC)	600 A	Module	1200 V	Module	2450 W	31000 pF	-40 °C	150 °C
Rohm Semiconductor BSM600C12P3G201				5.6 V	Chassis Mount	SiCFET (Silicon Carbide)	600 A	Module	1200 V	Module		28000 pF			2460 W	22 V	-4 V	N-Channel	175 °C