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IR MOSFET™ P-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 11.9 MOHM;
| Part | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | FET Type | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Technology | Drain to Source Voltage (Vdss) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Package / Case | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 4.5 V 10 V | 2.5 W | 52 nC | P-Channel | 12 A | 2.4 V | MOSFET (Metal Oxide) | 30 V | Surface Mount | 1680 pF | 8-SO | -55 °C | 150 °C | 20 V | 8-SOIC | 3.9 mm | 0.154 in | 11.9 mOhm |