VBT1080 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE ARR SCHOTT 80V 5A TO263AB
| Part | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Technology | Voltage - Forward (Vf) (Max) | Package / Case | Current - Average Rectified (Io) (per Diode) | Mounting Type | Voltage - DC Reverse (Vr) (Max) | Package Name | Current - Reverse Leakage | Diode Pair Count | Diode Configuration | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 500 ns | 200 mA | Schottky | 720 mV | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 5 A | Surface Mount | 80 V | TO-263AB (D2PAK) | 400 µA | 1 pair | Common Cathode | 150 °C | -55 °C | |
Vishay General Semiconductor - Diodes Division | 500 ns | 200 mA | Schottky | 810 mV | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | 80 V | TO-263AB (D2PAK) | 600 µA | 150 °C | -55 °C | 10 A | |||
Vishay General Semiconductor - Diodes Division | 500 ns | 200 mA | Schottky | 720 mV | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 5 A | Surface Mount | 80 V | TO-263AB (D2PAK) | 400 µA | 1 pair | Common Cathode | 150 °C | -55 °C | |
Vishay General Semiconductor - Diodes Division | 500 ns | 200 mA | Schottky | 810 mV | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | 80 V | TO-263AB (D2PAK) | 600 µA | 150 °C | -55 °C | 10 A |