DMTH3002LPS Series

30V +175°C N-Channel Enhancement Mode MOSFET

Catalog

30V +175°C N-Channel Enhancement Mode MOSFET

Part	Grade	Package / Case	FET Type	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]
Diodes Inc DMTH3002LPS-13	Automotive	8-PowerTDFN	N-Channel	1.2 W 136 W	16 V	1.6 mOhm	100 A	Surface Mount	2 V	30 V	77 nC	5000 pF	AEC-Q101	4.5 V 10 V	PowerDI5060-8	MOSFET (Metal Oxide)	-55 °C	175 ░C

Catalog

30V +175°C N-Channel Enhancement Mode MOSFET

Key Features

• Thermally Efficient Package – Cooler Running Applications

• <1.1mm Package Profile – Ideal for Thin Applications

• High Conversion Efficiency

• Low RDS(ON)– Minimizes On-State Losses

• Low Input Capacitance

• Fast Switching Speed

Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in power management and load switch.