MBRT600 Series
Manufacturer: GeneSiC Semiconductor
DIODE SCHOTTKY 40V 600A 3-PIN THREE TOWER
| Part | Package / Case | Voltage - DC Reverse (Vr) (Max) | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Current - Average Rectified (Io) (per Diode) | Current - Reverse Leakage | Package Name | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Mounting Type | Voltage - Forward (Vf) (Max) | Technology | Diode Pair Count | Diode Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Three Tower | 40 V | 500 ns | 200 mA | 300 A | 1 mA | Three Tower | 150 °C | -55 °C | Chassis Mount | 750 mV | Schottky | 1 pair | Common Anode |
GeneSiC Semiconductor | Three Tower | 60 V | 500 ns | 200 mA | 300 A | 1 mA | Three Tower | 150 °C | -55 °C | Chassis Mount | 800 mV | Schottky | 1 pair | Common Cathode |
GeneSiC Semiconductor | Three Tower | 150 V | 500 ns | 200 mA | 300 A | 1 mA | Three Tower | 150 °C | -55 °C | Chassis Mount | 880 mV | Schottky | 1 pair | Common Anode |
GeneSiC Semiconductor | Three Tower | 45 V | 500 ns | 200 mA | 300 A | 1 mA | Three Tower | 150 °C | -55 °C | Chassis Mount | 750 mV | Schottky | 1 pair | Common Cathode |
GeneSiC Semiconductor | Three Tower | 150 V | 500 ns | 200 mA | 300 A | 1 mA | Three Tower | 150 °C | -55 °C | Chassis Mount | 880 mV | Schottky | 1 pair | Common Cathode |
GeneSiC Semiconductor | Three Tower | 40 V | 500 ns | 200 mA | 300 A | 1 mA | Three Tower | 150 °C | -55 °C | Chassis Mount | 750 mV | Schottky | 1 pair | Common Cathode |
GeneSiC Semiconductor | Three Tower | 30 V | 500 ns | 200 mA | 300 A | 1 mA | Three Tower | 150 °C | -55 °C | Chassis Mount | 750 mV | Schottky | 1 pair | Common Anode |
GeneSiC Semiconductor | Three Tower | 35 V | 500 ns | 200 mA | 300 A | 3 mA | Three Tower | 150 °C | -55 °C | Chassis Mount | 600 mV | Schottky | 1 pair | Common Cathode |
GeneSiC Semiconductor | Three Tower | 30 V | 500 ns | 200 mA | 300 A | 1 mA | Three Tower | 150 °C | -55 °C | Chassis Mount | 750 mV | Schottky | 1 pair | Common Cathode |
GeneSiC Semiconductor | Three Tower | 200 V | 500 ns | 200 mA | 300 A | 1 mA | Three Tower | 150 °C | -55 °C | Chassis Mount | 920 mV | Schottky | 1 pair | Common Cathode |