IXDI602 Series

Catalog

GATE DRIVERS 2-A DUAL LOW-SIDE ULTRAFAST MOSFET

Part	Driven Configuration	Number of Drivers	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Package Length	Package Name	Package Features	Package Width	Gate Type	Logic Voltage - VIL	Logic Voltage - VIH	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Fall Time (Typ)	Rise Time (Typ)	Input Type	Current - Peak Output (Sink)	Current - Peak Output (Source)	Channel Type	Gate Channel
LITTELFUSE IXDI602SITR	Low-Side	2	Surface Mount	-55 °C	150 °C	0.154 in	8-SOIC 8-SOIC-EP	Exposed Pad	3.9 mm	IGBT N-Channel P-Channel MOSFET	0.8 V	3 V	35 V	4.5 V	6.5 ns	7.5 ns	Inverting	2 A	2 A	Independent
LITTELFUSE IXDI602SIATR	Low-Side	2	Surface Mount	-55 °C	150 °C	0.154 in	8-SOIC		3.9 mm	IGBT N-Channel P-Channel MOSFET	0.8 V	3 V	35 V	4.5 V	6.5 ns	7.5 ns	Inverting	2 A	2 A	Independent
LITTELFUSE IXDI602SIA	Low-Side	2	Surface Mount	-55 °C	150 °C	0.154 in	8-SOIC		3.9 mm	IGBT MOSFET	0.8 V	3 V	35 V	4.5 V	6.5 ns	7.5 ns	Inverting	2 A	2 A	Independent	N-Channel P-Channel
LITTELFUSE IXDI602SIATR	Low-Side	2	Surface Mount	-55 °C	150 °C	0.154 in	8-SOIC		3.9 mm	IGBT MOSFET	0.8 V	3 V	35 V	4.5 V	6.5 ns	7.5 ns	Inverting	2 A	2 A	Independent	N-Channel P-Channel
LITTELFUSE IXDI602SITR	Low-Side	2	Surface Mount	-55 °C	150 °C	0.154 in	8-SOIC 8-SOIC-EP	Exposed Pad	3.9 mm	IGBT MOSFET	0.8 V	3 V	35 V	4.5 V	6.5 ns	7.5 ns	Inverting	2 A	2 A	Independent	N-Channel P-Channel
LITTELFUSE IXDI602PI	Low-Side	2	Through Hole	-55 °C	150 °C	0.3 in	8-DIP		7.62 mm	IGBT N-Channel P-Channel MOSFET	0.8 V	3 V	35 V	4.5 V	6.5 ns	7.5 ns	Inverting	2 A	2 A	Independent
LITTELFUSE IXDI602PI	Low-Side	2	Through Hole	-55 °C	150 °C	0.3 in	8-DIP		7.62 mm	IGBT MOSFET	0.8 V	3 V	35 V	4.5 V	6.5 ns	7.5 ns	Inverting	2 A	2 A	Independent	N-Channel P-Channel
LITTELFUSE IXDI602SIA	Low-Side	2	Surface Mount	-55 °C	150 °C	0.154 in	8-SOIC		3.9 mm	IGBT N-Channel P-Channel MOSFET	0.8 V	3 V	35 V	4.5 V	6.5 ns	7.5 ns	Inverting	2 A	2 A	Independent