Beta
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MOSFET N-CH 60V 9A/55A TO220
| Part | Technology | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | FET Type | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | MOSFET (Metal Oxide) | 20 V | 30 nC | 2.5 V | 10.7 mOhm | 2007 pF | TO-220-3 | 4.5 V 10 V | 2.1 W 75 W | N-Channel | 9 A 55 A | Through Hole | 60 V | TO-220 | -55 °C | 175 ░C |