MOSFET P-CH 30V 4A SOT23F
| Part | Package / Case | Technology | Mounting Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Operating Temperature | Supplier Device Package | Vgs (Max) [Min] | Vgs (Max) [Max] | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Vgs(th) (Max) @ Id | FET Type | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | SOT-23-3 Flat Leads | MOSFET (Metal Oxide) | Surface Mount | 30 V | 71 mOhm | 150 °C | SOT-23F | -20 V | 10 V | 1 W | 5.9 nC | 4 V | 10 V | 2 V | P-Channel | 4 A | 280 pF |