Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 38 A, 650 V, 0.046 OHM, TO-247
| Part | Technology | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Supplier Device Package | FET Type | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Mounting Type | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | SiC (Silicon Carbide Junction Transistor) | 46 mOhm | 650 V | TO-247-4 | 15 V | 20 V | PG-TO247-4-8 | N-Channel | 22 nC | 5.6 V | -55 °C | 175 ░C | 790 pF | -7 V 23 V | Through Hole | 38 A |