PSMN1R9 Series
Manufacturer: NXP USA Inc.
Beta
⌘K
N-CHANNEL POWER MOSFET
| Part | Vgs(th) (Max) | Vgs (Max) | Package Name | Gate Charge (Max) | Technology | Operating Temperature (Min) | Operating Temperature (Max) | Rds On (Max) | Package / Case | Drain to Source Voltage (Vdss) | FET Type | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) | Mounting Type | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Current - Continuous Drain (Id) (Ta) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 NXP USA Inc. | 2.1 V | 20 V | TO-220AB | 230 nC | MOSFET (Metal Oxide) | -55 °C | 175 °C | 1.7 mOhm | TO-220-3 | 40 V | N-Channel | 349 W | 13200 pF | Through Hole | 10 V | 4.5 V | 150 A |