Beta
⌘K
OPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; PQFN 3.3 X 3.3 PACKAGE; 1.7 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE
| Part | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Vgs(th) (Max) @ Id | Technology | FET Type | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 1.7 mOhm | 2000 pF | 30 nC | Surface Mount | 25 V | -55 °C | 150 °C | 8-PowerTDFN | 4.5 V 10 V | 16 V | 2 V | MOSFET (Metal Oxide) | N-Channel | 2.1 W 50 W | 27 A 40 A |