SIC 6N-CH 1200V 475A MODULE
| Part | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Drain to Source Voltage (Vdss) | Supplier Device Package | Package / Case | Vgs(th) (Max) @ Id | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GE Aerospace GE12050EEA3 | 475 A | 4.4 mOhm | 1248 nC | Chassis Mount | 29300 pF | 1200 V | 1.2 kV | Module | Module | 4.5 V | Silicon Carbide (SiC) | 150 °C | -55 °C | 6 N-Channel (3-Phase Bridge) |